CMOS Image Sensor and Manufacturing Method Thereof

ABSTRACT

Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes forming an isolation layer in a semiconductor substrate, defining an active region including a photo diode region and a transistor region; forming a gate insulating layer and a gate electrode on the transistor region; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming an insulating layer over an entire surface of the substrate; implanting fluorine ions in an upper surface of the photo diode region; etching the insulating layer to form insulating sidewalls on sides of the gate electrode; forming a high-concentration diffusion region in the transistor region partially overlapping with the second low-concentration diffusion region; and forming a third low-concentration diffusion region on the upper surface of the photo diode region, the third low-concentration diffusion region having a conductivity type opposite to the first low-concentration diffusion region.

This application is a divisional of co-pending U.S. application Ser. No.11/503,428, filed Aug. 10, 2006 (Attorney Docket No.OPP-GZ-2007-0393-US-00), which claims the benefit of Korean ApplicationNo. 10-2005-0073264, filed on Aug. 10, 2005, each of which isincorporated by reference herein in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an image sensor, more specifically, toa complementary metal oxide semiconductor (CMOS) image sensor andmanufacturing method thereof.

2. Description of the Related Art

An image sensor, as a kind of semiconductor device, transforms opticalimages into electrical signals. Image sensors can be generallyclassified into a charge coupled device (CCD) and a CMOS image sensor.

Conventionally, a CCD comprises a plurality of photo diodes arranged inthe form of matrix to transform optical signal into electrical signal, aplurality of vertical charge coupled devices (VCCDs) formed between thephoto diodes to transmit charges generating in each photo diode in avertical direction, a plurality of horizontal charge coupled devices(HCCDs) for transmitting charges transmitted from each VCCDs in ahorizontal direction, and a sense amplifier for sensing chargestransmitted in the horizontal direction to output electrical signals.

It has been generally known that CCDs have complicated operationalmechanisms and high power consumption. In addition, its manufacturingmethod is relatively complicated, because multiple steps ofphotolithography processes are required. Especially, it is difficult tointegrate a CCD with other devices such as control circuits, signalprocessing circuits, analog/digital converter, etc., on a single chip.Such disadvantages of CCDs may hinder miniaturization of productscontaining a CCD.

In order to overcome above described disadvantages of CCDs, CMOS imagesensors have been recently developed in the oncoming generation(s) ofimage sensors. A CMOS image sensor comprises MOS transistors formed in asemiconductor substrate by CMOS fabrication technologies. In CMOS imagesensor, the MOS transistors are formed relative to the number of unitpixels, along with peripheral circuits such as control circuits, signalprocessing circuits, and the like. CMOS image sensor employs a switchingmode that MOS transistors successively detect the output of each pixel.

More specifically, a conventional CMOS image sensor may comprise a photodiode and a certain number of MOS transistors in each pixel, therebysuccessively detecting electrical signals of each pixel in a switchingmode to express a given image.

The CMOS image sensor has advantages such as low power consumption andrelatively simple fabrication process. In addition, the CMOS imagesensor can be integrated with control circuits, signal processingcircuits, analog/digital converter(s), etc., because such circuits canbe manufacturing using CMOS manufacturing technologies, which enablesminiaturization of products. CMOS image sensors have been widely used ina variety of applications such as digital still cameras, digital videocameras, and the like.

Meanwhile, CMOS image sensors can be classified into 3T, 4T, 5T types,etc., according to the number of transistors in a unit pixel. The 3Ttype CMOS image sensor comprises one photo diode and three transistors,and the 4T type comprises one photo diode and four transistors. Here, aunit pixel layout of the 3T type CMOS image sensor is configured asfollows.

FIG. 1 is a circuit diagram of a conventional CMOS image sensor, andFIG. 2 is a layout illustrating a unit pixel in the conventional 3T typeCMOS image sensor.

As shown in FIG. 1, a unit pixel of the conventional 3T type CMOS imagesensor comprises one photo diode PD and three NMOS transistors T1, T2,and T3. A cathode of the photo diode PD is connected to a drain of thefirst NMOS transistor T1 and a gate of the second NMOS transistor T2.

Especially, sources of the first and second NMOS transistors T1 and T2are connected to a supply terminal (VR) for supplying a standardvoltage, and a gate of the first NMOS transistor T1 is connected to areset terminal for supplying a reset signal (RST).

In addition, a source of the third NMOS transistor T3 is connected to adrain of the second NMOS transistor T2, and a drain of the third NMOStransistor T3 is connected to a detecting circuit (not shown) via asignal line. Furthermore, a gate of the third NMOS transistor T3 isconnected to a select signal line SLCT.

Here, the first NMOS transistor T1 is a reset transistor Rx forresetting photoelectrons collected in the photo diode PD. The secondNMOS transistor T2 is a drive transistor Dx functioning as a sourcefollower buffer amplifier. In addition, the third NMOS transistor T3 isa select transistor Sx functioning as a switch and addresser.

In the conventional 3T type CMOS image sensor, as shown in FIG. 2, onephoto diode 20 is formed in a large portion of a defined active region10, and three gate electrodes 120, 130, and 140 of the first to thirdtransistors are respectively formed to be overlapped in other portion ofthe active region 10.

The first gate electrode 120 constitutes the reset transistor Rx. Thesecond gate electrode 130 constitutes the drive transistor Dx. The thirdgate electrode 140 constitutes the select transistor Sx.

Here, dopant ions are implanted in the active region 10 where eachtransistor is formed, except for the portion of active region below eachgate electrodes 120, 130, and 140, to form source and drain regions ofeach transistor.

Here, a supply voltage Vdd is applied to source/drain regions betweenthe reset transistor Rx and the drive transistor Dx, and thesource/drain regions formed at one side of the select transistor Sx isconnected to detecting circuits (not shown).

The above-described gate electrodes 120, 130, and 140 are respectivelyconnected to signal lines, and each signal line is connected to externaldriving circuits via predetermined pads, even which are not shown.

FIGS. 3 a to 3 e are cross-sectional views successively illustrating aconventional method for manufacturing a CMOS image sensor, in view ofIII-III′ line in FIG. 2.

As shown in FIG. 3 a, a low concentration of P− type epitaxial layer 62is formed on a heavy concentration of a P++ type semiconductor substrate61, using an epitaxial process. Here, the low concentration of P− typeepitaxial layer 62 is formed in a thickness of 4˜7 μm.

Subsequently, after photolithographically masking an active region andexposing an isolation region on the semiconductor substrate 61, anisolation layer 63 is formed in the isolation region using a shallowtrench isolation (STI) process or a local oxidation of silicon (LOCOS)process.

Next, a gate insulating layer 64 and a conductive layer (e.g., a heavydoped polysilicon layer) are deposited on the entire surface of theepitaxial layer 62, in successive order. The conductive layer and thegate insulating layer 64 are selectively patterned usingphotolithography and etching processes, thus forming the gate electrode65.

Referring to FIG. 3 b, a first photoresist layer 66 is applied over theentire surface of the semiconductor substrate 61 including the gateelectrode 65, and then it is patterned using exposure and developmentprocesses, thus covering the photo diode region and exposing thetransistor region where source/drain regions will be formed.

Using the first photoresist pattern 66 as a mask, a low concentration ofN-type dopant ions are implanted in the exposed transistor region toform a low concentration of N-type diffusion region 67.

As shown in FIG. 3 c, after removal of the first photoresist pattern 66,a second photoresist layer 68 is applied over the semiconductorsubstrate 61, and then it is patterned using exposure and developmentprocesses, thus exposing the photo diode region.

Then, using the second photoresist pattern 68 as a mask, a lowconcentration of N-type dopant ions are implanted in the exposed photodiode region of the epitaxial layer 62, thus forming a low concentrationof N-type diffusion region 69.

Here, the low concentration of N-type diffusion region 69 is preferablyformed at a depth greater than that of the low concentration of N-typediffusion region 67, using a higher implantation energy than that usedto form N-type diffusion region 67.

Preferably, the N-type diffusion region 69 is formed deeper to improvethe sensitivity of the image sensor.

Here, the N-type diffusion region 69 functions as a source of the resettransistor, referred to as Rx in FIGS. 1 and 2.

In the above-described structure of CMOS image sensor, a reverse bias isapplied between the N-type diffusion region 69 of the photo diode andthe low concentration of P-type epitaxial layer 62, thus resulting in adepletion layer where electrons are generated by a light. When the resettransistor Rx turns off, the generated electrons lower the potential ofthe drive transistor Dx. Lowering of potential of the driver transistorproceeds continuously from turn-off of the reset transistor Rx, thusresulting in potential difference. The image sensor can be operated bydetecting the potential difference as a signal.

As shown in FIG. 3 d, after removing the second photoresist pattern 68,an insulating layer is formed over the entire surface of the substrate61. Then, an etch-back process is preformed on the insulating layer toform insulating sidewalls 70 on both sides of the gate electrode 65.

A third photoresist layer 71 is then formed over the entire surface ofthe substrate 61, and then it is patterned by exposure and developmentprocesses to cover the photo diode region and expose the transistorsource/drain regions.

Using the third photoresist pattern 71 as a mask, a high concentrationof N-type dopant ions are implanted in source/drain regions to form ahigh concentration of N-type diffusion region 72, i.e., a N+ typediffusion region.

As shown in FIG. 3 e, after removing the third photoresist pattern 71, afourth photoresist layer 73 is applied over the entire surface of thesubstrate 61, and then it is patterned by exposure and developmentprocesses to expose the photo diode region.

Subsequently, using the photoresist pattern 73 as an etching mask,P-type dopant ions are implanted in the photo diode region where theN-type diffusion region 69 is formed, thus forming a P0 type diffusionregion 74 in the vicinity of the surface of the epitaxial layer 62.

The above-described conventional CMOS image sensor has disadvantages dueto increase of dark currents, such as deterioration of deviceperformances (e.g., charge storage capability).

Here, dark currents, as a kind of noise appearing in a displayed image,are induced by current leakage that can be mainly generated in the photodiode region.

In general, the current leakage may appear in interface trap defects inthe vicinity of the sidewall of the isolation layer, and in surfacedefects of the photo diode.

Conventionally, in order to remove the interface trap defects arousingthe dark current, the device is annealed in a furnace to join danglingbonds of silicon with hydrogen. However, Si—H bonds are weak to beeasily broken during operation of the device.

SUMMARY OF THE INVENTION

It is, therefore, an object of the present invention to provide a CMOSimage sensor and a manufacturing method thereof, wherein fluorine ionsare implanted in an upper surface of a photo diode, thus reducingsurface defects resulting in dark currents.

To achieve the above object, an embodiment of a method for manufacturinga CMOS image sensor, according to the present invention, comprises thesteps of: forming an isolation layer in a semiconductor substrate,defining an active region including a photo diode region and atransistor region; forming a gate insulating layer and a gate electrodeon the transistor region; forming a first low-concentration diffusionregion in the photo diode region; forming a second low-concentrationdiffusion region in the transistor region; forming an insulating layerover an entire surface of the substrate; implanting fluorine ions in anupper surface of the photo diode region; etching the insulating layer toform insulating sidewalls on sides of the gate electrode; forming ahigh-concentration diffusion region in the transistor region partiallyoverlapping with the second low-concentration diffusion region; andforming a third low-concentration diffusion region on the upper surfaceof the photo diode region, the third low-concentration diffusion regionhaving a conductivity type opposite to the first low-concentrationdiffusion region.

In a CMOS image sensor including a photo diode and a MOS transistoraccording to the present invention, the photo diode comprises: a firstlow-concentration diffusion region in a semiconductor substrate, havinga conductivity type opposite to the substrate; and a fluorine implantlayer in an upper surface of the substrate, at least partiallyoverlapping with the first low-concentration diffusion region.

These and other aspects of the invention will become evident byreference to the following description of the invention, often referringto the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a circuit diagram of a conventional CMOS image sensor.

FIG. 2 is a layout illustrating a unit pixel in the conventional 3T typeCMOS image sensor.

FIGS. 3 a to 3 e are cross-sectional views illustrating a conventionalmethod for manufacturing a CMOS image sensor, in view of III-III′ linein FIG. 2.

FIGS. 4 a to 4 f are cross-sectional views illustrating a method formanufacturing a CMOS image sensor, in view of III-III′ line in FIG. 2.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 4 a to 4 f are cross-sectional views illustrating a method formanufacturing a CMOS image sensor, in view of III-III′ line in FIG. 2.

As shown in FIG. 4 a, an epitaxial layer 102 (e.g., having a relativelylow concentration of a P-type dopant) is formed on a semiconductorsubstrate 101 (e.g., a single crystalline silicon substrate, which mayhave a relatively heavy concentration of a P-type dopant; e.g., aP++substrate), using an epitaxial process.

Here, the epitaxial layer 102 functions to form a deep and widedepletion region in the photo diode region. Thereby, the ability of alow-voltage photo diode for gathering photoelectrons can be improved,and also the light sensitivity can be improved.

Alternatively, the semiconductor substrate 101 can be an N-typesemiconductor substrate, and the epitaxial layer can be a P-typeepitaxial layer.

Here, the epitaxial layer 102 has a thickness of 4˜7 μm.

Subsequently, an isolation layer 103 is formed on the substrate 101 toisolate circuit elements that will be formed in the subsequent process.

Here, formation of the isolation layer 103 is performed as follows, eventhough it is not shown in the drawing.

Firstly, a pad oxide layer, a pad nitride layer, and a TEOS (Tetra EthylOrtho Silicate) oxide layer are formed in successive order, and aphotoresist layer is applied on the TEOS oxide layer.

Next, using a mask defining an active region and an isolation region,the photoresist layer is exposed and developed to form a photoresistpattern. Especially, the portion of the photoresist layer on theisolation region is removed.

After that, the portions of the TEOS oxide layer, the pad nitride layer,and the pad oxide layer over the isolation region are selectivelyremoved using the photoresist pattern as an etching mask.

In addition, using the patterned TEOS oxide layer, pad nitride layer,and pad oxide layer as an etching mask, a portion of the substrate isetched in a predetermined depth to form a trench.

Afterward, a sacrificial oxide layer may be formed on the exposedsurface of the substrate through the trench, and the trench is filledwith an insulator, such as a silicon dioxide (e.g., an O₃ TEOS oxide)layer. The sacrificial oxide layer is preferably formed in or on theinner wall of the trench, and the O₃ TEOS oxide layer is formed at atemperature of about 1,000° C. or more.

After filling the trench, the portion of the O₃ TEOS oxide layer outsidethe trench and pad layers is removed by a chemical mechanical polishing,thus forming the isolation layer 103 in the trench. Then, the pad oxidelayer, the pad nitride layer, and the TEOS oxide layer are removed.

Next, a gate insulating layer 104 and a conductive layer (e.g., a heavydoped polysilicon layer) are deposited on the entire surface of theepitaxial layer 102, in successive order. The conductive layer and thegate insulating layer 104 are selectively patterned usingphotolithography and etching processes, thus forming the gate electrode105. The gate insulating layer 104 can be formed using thermal oxidationprocess or chemical vapor deposition (CVD) process.

Referring to FIG. 4 b, a first photoresist layer 106 is applied over theentire surface of the semiconductor substrate 101 including the gateelectrode 105, and then it is patterned using exposure and developmentprocesses, thus covering the photo diode region and exposing thetransistor region where source/drain regions will be formed.

Using the first photoresist pattern 106 as a mask, a low concentrationof N-type dopant ions are implanted in the exposed transistor region toform a low concentration N-type diffusion region 107.

As shown in FIG. 4 c, after removal of the first photoresist pattern106, a second photoresist layer 108 is applied over the semiconductorsubstrate 101, and then it is patterned using exposure and developmentprocesses, thus exposing the photo diode region.

Then, using the second photoresist pattern 108 as a mask, a lowconcentration of N-type dopant ions are implanted in the exposed photodiode region of the epitaxial layer 102, thus forming a lowconcentration N-type diffusion region 109.

Here, the low concentration N-type diffusion region 109 is preferablyformed at a depth greater than that of the low concentration N-typediffusion region 107, using a higher implantation energy than that usedto form N-type diffusion region 107.

In addition, the N-type diffusion region 109 is preferably formed apredetermined distance d from the isolation layer 103. In other words,the second photoresist pattern 108 preferably covers a portion of theactive region beyond the isolation layer 103.

As shown in FIG. 4 d, the second photoresist pattern 108 is completelyremoved, and then an insulating layer 110 a is formed over the entiresurface of the substrate 101.

Here, the insulating layer 110 a may comprise a nitride layer, a TEOSoxide layer, or a bilayer thereof. Next, fluorine (F) ions are implantedin the entire surface of the epitaxial layer 102 through the insulatinglayer 110 a.

Here, the implantation of fluorine ions is performed on an upper portionof the N-type diffusion region 109 in the photo diode region, with animplantation energy that is determined according to the thickness of theinsulating layer 110 a. In other words, the fluorine ion implantationenergy corresponds to the thickness of the insulating layer 110 aaccording to a known and/or predetermined relationship (e.g., thegreater the thickness of the insulating layer 110 a, the higher thefluorine ion implantation energy).

When fluorine ions are implanted in the upper portion of the N-typediffusion region 109, fluorine-silicon bonds are generated to reducesurface trap sites (or leakages) that may cause dark currents. Thefluorine-silicon bond is stronger than the silicon-hydrogen bond, sothat it rarely breaks (e.g., under conditions typically encountered inoperation of a CMOS image sensor).

As shown in FIG. 4 e, an etch-back process (e.g., an anisotropicreactive ion etching process) is performed on the insulating layer 110 ato form insulating sidewalls 110 on sides of the gate electrode 105.

A third photoresist layer 111 is then formed over the entire surface ofthe substrate 101, and then it is patterned by exposure and developmentprocesses to cover the photo diode region and expose the transistorsource/drain regions.

Using the third photoresist pattern 111 as a mask, a high concentrationof N-type dopant ions are implanted in source/drain regions to form ahigh concentration N-type diffusion region 112, i.e., a N+ typediffusion region.

As shown in FIG. 4 f, after removing the third photoresist pattern 111,a fourth photoresist layer 112 is applied over the entire surface of thesubstrate 101, and then it is patterned by exposure and developmentprocesses to expose the photo diode region.

Subsequently, using the photoresist pattern 112 as an etching mask,P-type dopant ions are implanted in the photo diode region where theN-type diffusion region 109 is formed, thus forming a P0 type diffusionregion 113 in the vicinity of the surface of the epitaxial layer 102.

Here, the P0 type diffusion region 113 is formed to a depth of 0.1˜1.0μm.

Afterward, the subsequent processes, which are not shown, are performedto manufacture a CMOS image sensor, after removing the fourthphotoresist pattern 112.

In the above-described method for manufacturing a CMOS image sensoraccording to the present invention, fluorine ions are implanted in theupper portion of the photo diode region so that fluorine-silicon bondsstronger than silicon-hydrogen bonds can be generated to reduce surfaceleakage causing dark currents. The fluorine-silicon bonds rarely tend tobreak during heat-treating or operating the device.

While the invention has been shown and described with reference tocertain preferred embodiments thereof, it will be understood by thoseskilled in the art that various changes in form and details may be madetherein without departing from the spirit and scope of the invention asdefined by the appended claims.

1. A CMOS image sensor including a photo diode and a MOS transistor, thephoto diode comprising: a first low-concentration diffusion region in asemiconductor substrate, having a conductivity type opposite to thesubstrate; and a fluorine implant layer in an upper surface of thesubstrate, at least partially overlapping with the firstlow-concentration diffusion region.
 2. The sensor of claim 1, whereinthe photo diode further comprises a second low-concentration diffusionregion having a conductivity type opposite to the firstlow-concentration diffusion region.
 3. The sensor of claim 2, whereinthe second low-concentration diffusion region has a shallower dopantconcentration profile than the first low-concentration diffusion region.4. The sensor of claim 1, further comprising an isolation layer in thesubstrate a predetermined distance from the first low-concentrationdiffusion region.
 5. The sensor of claim 2, further comprising anisolation layer in the substrate a predetermined distance from the firstlow-concentration diffusion region.
 6. The sensor of claim 1, whereinthe MOS transistor comprises a gate insulating layer and a gateelectrode.
 7. The sensor of claim 6, wherein the gate electrodecomprises polysilicon and fluorine ions.
 8. The sensor of claim 2,wherein the MOS transistor comprises a gate insulating layer and a gateelectrode.
 9. The sensor of claim 8, wherein the gate electrodecomprises polysilicon and fluorine ions.
 10. The sensor of claim 6,further comprising insulating sidewalls on sides of the gate electrode.11. The sensor of claim 10, wherein the insulating sidewalls comprise atleast one of a nitride and a TEOS oxide.
 12. The sensor of claim 11,wherein the insulating sidewalls comprise fluorine ions.
 13. The sensorof claim 1, wherein the MOS transistor comprises a thirdlow-concentration diffusion region having a conductivity type oppositeto the substrate.
 14. The sensor of claim 13, wherein the thirdlow-concentration diffusion region has a shallower dopant concentrationprofile than the first low-concentration diffusion region.
 15. Thesensor of claim 13, wherein the MOS transistor comprises ahigh-concentration diffusion region, at least partially overlapping withthe third low-concentration diffusion region.
 16. The sensor of claim15, wherein the third low-concentration diffusion region has a shallowerdopant concentration profile than the high-concentration diffusionregion.
 17. The sensor of claim 1, further comprising ahigh-concentration diffusion region.
 18. The sensor of claim 4, furthercomprising a complementary low-concentration diffusion region on anupper surface of the photodiode which extends to the isolation layer andpartially overlaps with the first low-concentration diffusion region.